惠普下一代‘忆阻器’存储技术有新进展

[vikyzhang]

HP Advances Next-Gen 'Memristor' Memory Technology
惠普下一代‘忆阻器’存储技术有新进展
posted by David Adams on Mon 16th May 2011 02:31 UTC
发表于：2011年5月16日 北京时间10:31

HP scientists have made a small breakthrough in the development of a next-generation memory technology called memristors, which some see as a potential replacement for today's widely used flash and DRAM technologies. In a paper to be published Monday in the journal "Nanotechnology," scientists report that they have mapped out the basic chemistry and structure of what happens inside a memristor during its electrical operation.
名叫忆阻器的下一代存储技术的开发工作在惠普科学家的努力下有了一个小的突破。忆阻器，有人认为它极有可能是今日被广泛使用的Flash和DRAM技术的替代品。在周一发布的杂志《纳米技术》一页中，科学家报告，他们已经绘制出了忆阻器在带电操作过程中内部所发生反应的基本的化学过程和物理结构。

英文原文：http://www.osnews.com/story/24742/HP_Ad ... Technology
译文原文：http://www.linux-ren.org/modules/newbb/ ... 3&forum=72
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